2N7374
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Bipolar Junction Transistor, part number 2N7374. This through-hole mounted power BJT offers a collector-emitter breakdown voltage of 200 V and a continuous collector current capability of 5 A, with a maximum power dissipation of 52.5 W. The TO-257 package provides robust thermal performance for demanding applications. This component is suitable for use in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-257 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 52.5 W |
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