2N7143
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N7143 is a high-power PNP bipolar junction transistor (BJT). This component features a collector-emitter breakdown voltage (Vce) of 80 V and a continuous collector current (Ic) capability of 12 A. With a maximum power dissipation of 87 W, it is suitable for demanding power switching and amplification applications. The 2N7143 is housed in a TO-204AD (TO-3) package, facilitating through-hole mounting. This robust transistor is commonly utilized in industrial control, power supply, and automotive systems where reliable high-current handling and voltage blocking are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 87 W |
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