2N6690
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology 2N6690 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This stud-mount device, housed in a TO-61 package, features a maximum collector-emitter breakdown voltage of 400 V and a continuous collector current capability of 15 A. With a maximum power dissipation of 3 W, it offers a minimum DC current gain (hFE) of 15 at 1 A and 3 V. The saturation voltage (Vce) at 5 A base current and 15 A collector current is rated at a maximum of 5 V. This component is suitable for use in power supply regulation and switching applications. It operates within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 5A, 15A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 3 W |
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