2N6689
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6689 is an NPN bipolar junction transistor designed for high-power applications. This component features a collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 15A, with a power dissipation of 6W. The device boasts a minimum DC current gain (hFE) of 15 at 1A and 3V. It is supplied in a TO-61 stud mount package for robust thermal management. The saturation voltage (Vce(sat)) is specified at a maximum of 5V at 5A base current and 15A collector current. This transistor is suitable for use in power switching and amplification circuits across various industrial and telecommunications applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 5A, 15A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 6 W |
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