2N6687
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6687 is a high-power NPN bipolar junction transistor. This component, housed in a TO-204AD (TO-3) package for through-hole mounting, offers a collector-emitter breakdown voltage of 180V and a continuous collector current capability of 25A. With a maximum power dissipation of 200W and a transition frequency of 20MHz, the 2N6687 is suitable for power switching and amplification applications. It exhibits a minimum DC current gain (hFE) of 25 at 10A and 2V. This device finds application in industrial power control and converter circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2.5mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 10A, 2V |
| Frequency - Transition | 20MHz |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 200 W |
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