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2N6686

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2N6686

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N6686 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 160 V collector-emitter breakdown voltage and a continuous collector current capability of 25 A, with a maximum power dissipation of 200 W. The transistor is packaged in a TO-204AD (TO-3) through-hole configuration, suitable for robust thermal management. Its Vce(sat) is specified at 1.5V at 2.5mA base current and 10mA collector current. The operating temperature range extends from -65°C to 200°C (TJ). This device finds utility in power switching, linear amplification, and general-purpose high-power amplification across various industrial and telecommunications sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 2.5mA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max200 W

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