2N6677
TRANS NPN 350V 15A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N6677 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a maximum collector-emitter breakdown voltage of 350 V and a continuous collector current capability of 15 A. With a power dissipation rating of 175 W and a transition frequency of 3 MHz, the 2N6677 is suitable for power switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 8 at 15 A and 3 V, and a Vce(sat) of 1.5 V at 3 A/15 A. The transistor operates within a temperature range of -65°C to 200°C (TJ) and is housed in a TO-204AA (TO-3) package, facilitating through-hole mounting. This component finds utility in industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3A, 15A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 15A, 3V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 175 W |
Request a Quote
Clients Also Buy
2N5347
PNP TRANSISTORS
JANSP2N3439L
RH POWER BJT
JAN2N918
TRANS NPN 15V 0.05A TO72
