2N6671
TRANS PNP 300V 8A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology PNP Bipolar Junction Transistor (BJT), part number 2N6671. This through-hole device features a 300V collector-emitter breakdown voltage and a maximum DC collector current of 8A. With a power dissipation of 150W, it offers a minimum DC current gain (hFE) of 10 at 8A and 300V. The transistor is housed in a TO-3 (TO-204AA) package and is suitable for applications in power switching and linear amplification, commonly found in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 8A, 300V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 150 W |
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