2N6650
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6650 is a PNP Darlington bipolar junction transistor designed for robust power switching applications. This component offers a high DC current gain of 1000 (min) at 5A and 3V, facilitating efficient amplification and control. With a maximum collector current (Ic) of 10A and a collector-emitter breakdown voltage (Vce) of 80V, the 2N6650 is suitable for applications requiring significant power handling. The device features a low saturation voltage of 3V at 100µA base current and 10A collector current. Packaged in a TO-204AA (TO-3) through-hole configuration, it is rated for a maximum power dissipation of 5W and operates across a wide temperature range of -65°C to 175°C. This transistor is commonly utilized in industrial power control and high-current switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100µA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
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