2N6649
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N6649 is a PNP Darlington bipolar transistor. This component features a collector current rating of 10 A and a collector-emitter breakdown voltage of 60 V. It offers a minimum DC current gain (hFE) of 1000 at 5 A and 3 V. The saturation voltage (Vce Sat) is a maximum of 3 V at 100 µA collector current and 10 A collector current. With a maximum power dissipation of 5 W, the 2N6649 is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. The operating temperature range is -65°C to 175°C (TJ). This device finds application in power switching and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100µA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
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