2N6594
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6594 is a high-power PNP bipolar junction transistor (BJT) packaged in a TO-204AA (TO-3) metal can. This through-hole device is rated for a maximum collector current of 12 A and a collector-emitter breakdown voltage of 40 V, with a power dissipation capability of 100 W. Its robust construction and thermal performance make it suitable for demanding applications across various industries, including industrial control, power supply regulation, and audio amplification. The 2N6594 offers reliable performance within an operating temperature range of -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 100 W |
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