2N6583
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6583 is a high-power NPN bipolar junction transistor (BJT) housed in a TO-204AD (TO-3) package, facilitating through-hole mounting. This device is engineered for demanding applications requiring robust power handling capabilities, featuring a maximum collector current (Ic) of 10 A and a maximum power dissipation of 125 W. The 2N6583 boasts a significant collector-emitter breakdown voltage (Vce) of 400 V, making it suitable for power switching and amplification circuits in industrial control, power supply, and automotive electronics sectors. Its construction in the TO-3 metal can package ensures efficient thermal management for reliable operation under strenuous conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 125 W |
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