2N6582
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
The Microchip Technology 2N6582 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector-emitter breakdown voltage of 350 V and can handle a continuous collector current of up to 10 A, with a power dissipation capability of 125 W. The 2N6582 utilizes a robust TO-204AD (TO-3) through-hole package, suitable for thermal management in power-intensive designs. Its construction makes it a reliable choice for power switching, linear amplification, and general-purpose high-voltage, high-current applications across various industrial sectors, including power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 125 W |
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