2N6581
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6581 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component is housed in a TO-204AD (TO-3) package, facilitating robust thermal management with a maximum power dissipation of 125 W. It offers a substantial collector current capability of up to 10 A and a high collector-emitter breakdown voltage of 450 V. The 2N6581 is suitable for power switching and amplification circuits across various industries, including industrial controls and power supplies. Operating across a wide temperature range from -65°C to 200°C (TJ), it ensures reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 3mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 125 W |
Request a Quote
Clients Also Buy
2N5347
PNP TRANSISTORS
JANSP2N3439L
RH POWER BJT
JAN2N918
TRANS NPN 15V 0.05A TO72
