2N6579
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6579 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-204AD (TO-3) package, facilitating efficient heat dissipation with a maximum power rating of 125 W. The 2N6579 supports a collector current of up to 12 A and boasts a high collector-emitter breakdown voltage of 350 V. It is suitable for through-hole mounting and operates across a wide temperature range from -65°C to 200°C (TJ). This device is commonly found in power switching and amplification circuits across industrial control, power supply, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 3mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 125 W |