2N6569
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6569 is a power bipolar junction transistor (BJT) designed for demanding applications. This NPN transistor features a collector-emitter breakdown voltage (Vce) of 40 V and a continuous collector current (Ic) capability of 12 A. With a maximum power dissipation of 100 W, it is suitable for high-power switching and amplification tasks. The 2N6569 is housed in a TO-204AD (TO-3) package, facilitating through-hole mounting and effective thermal management. This component finds utility in industrial power control, audio amplification, and voltage regulation circuits where robust power handling is essential.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 100 W |
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