2N6563
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6563 is an NPN bipolar junction transistor (BJT) designed for high-power applications. Featuring a 300 V collector-emitter breakdown voltage and a continuous collector current capability of 10 A, this device offers a maximum power dissipation of 100 W. The 2N6563 utilizes a stud mount configuration, with the Supplier Device Package specified as TO-61. It is suitable for operation across a wide temperature range from -65°C to 200°C (TJ). This component finds application in power supply regulation, switching circuits, and general high-power amplification across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 100 W |
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