2N6562
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6562 is a robust NPN bipolar junction transistor (BJT) designed for high-power applications. Featuring a maximum collector-emitter breakdown voltage of 450 V and a continuous collector current capability of 10 A, this device offers a substantial power dissipation rating of 100 W. Its stud mount configuration, compatible with TO-61, TO-211MA, and TO-210AC packages, facilitates efficient thermal management in demanding environments. The 2N6562 is suitable for use in power switching, amplification, and control circuits across various industrial sectors, including industrial automation, power supplies, and motor control. Supplied in bulk packaging, this component is engineered for reliable performance in power-intensive designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 100 W |
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