2N6561
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6561 is a high-power NPN bipolar junction transistor (BJT) designed for demanding switching and amplification applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a 300V collector-emitter breakdown voltage and a continuous collector current capability of 10A. With a maximum power dissipation of 125W, the 2N6561 is suitable for industrial power control, audio amplification, and regulated power supplies. Its robust design ensures reliable performance in various demanding environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 125 W |
Request a Quote
Clients Also Buy
JANTXV2N6649
TRANS PNP DARL 60V 10A TO204AA
JANTX2N3418
TRANS NPN 60V 3A TO5
JAN2N2605
TRANS PNP 60V 0.03A TO46-3
