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2N6514

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2N6514

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N6514 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, offers a 300 V collector-emitter breakdown voltage and a maximum continuous collector current of 7 A. With a substantial power dissipation capability of 120 W, the 2N6514 is suitable for power switching and amplification circuits. Its robust construction and electrical characteristics make it a reliable choice for use in industrial control systems, power supplies, and motor drive applications requiring significant power handling.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max120 W

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