2N6513
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6513 is a high-power NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This device features a maximum collector-emitter breakdown voltage (Vceo) of 350 V and a continuous collector current (Ic) capability of 7 A. With a maximum power dissipation of 120 W, the 2N6513 is well-suited for power switching and amplification circuits. Its TO-204AD (TO-3) through-hole package facilitates easy mounting and thermal management. This transistor finds application in industrial power supplies, motor control, and general-purpose power amplification where reliability and substantial power handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 120 W |
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