2N6512
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6512 is an NPN bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a 300V collector-emitter breakdown voltage and a maximum collector current of 7A. With a power dissipation capability of 120W and a transition frequency of 3MHz, it is suitable for power switching and amplification circuits. Key specifications include a minimum DC current gain (hFE) of 10 at 4A and 3V, and a Vce saturation of 1.5V at 800mA and 4A. This device finds application in industrial power control and linear voltage regulation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 800mA, 4A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 4A, 3V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 120 W |
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