2N6511
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6511 is a PNP power bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a robust 250V collector-emitter breakdown voltage and a substantial 7A collector current capability. With a maximum power dissipation of 120W, the 2N6511 is well-suited for power switching and amplification in industrial control, power supply, and audio amplification circuits. Its wide operating temperature range of -65°C to 200°C ensures reliability in challenging environments. The device features a Vce(sat) of 1.5V at 800µA base current and 4mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 800µA, 4mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 120 W |
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