2N6510
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Power Bipolar Junction Transistor (BJT), part number 2N6510. This through-hole component is housed in a TO-204AD (TO-3) package, offering a robust solution for power switching and amplification applications. It features a high collector-emitter breakdown voltage of 200 V and a maximum collector current of 7 A, with a power dissipation capability of 120 W. This device is commonly utilized in industrial power control, audio amplification, and power supply circuits where reliable power handling is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 120 W |
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