2N6496
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6496 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a maximum collector current of 15 A and a collector-emitter breakdown voltage of 110 V. With a maximum power dissipation of 140 W, it is suitable for power switching and amplification circuits. The transistor exhibits a Vce(sat) of 1V at 800µA base current and 8mA collector current. Its operating temperature range is -65°C to 200°C. This device finds application in industrial power supplies, audio amplifiers, and voltage regulation circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 800µA, 8mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 110 V |
| Power - Max | 140 W |
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