2N6385P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6385P is an NPN Darlington bipolar transistor designed for high-power applications. This through-hole component features a robust TO-204AA (TO-3) package, enabling efficient thermal management with a maximum power dissipation of 6W. It offers a significant collector current capability of 10A and a breakdown voltage of 80V. The device exhibits a high DC current gain (hFE) of 1000 minimum at 5A and 3V, indicative of its suitability for amplification and switching tasks requiring substantial gain. Saturation voltage (Vce Sat) is constrained to a maximum of 3V at 100mA base current and 10A collector current. The operating temperature range spans from -55°C to 175°C (TJ). This component is commonly utilized in industrial control, power supply regulation, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 6 W |
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