2N6383
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6383 is an NPN bipolar junction transistor featuring a Darlington configuration. This device offers a collector current capability of 10 A and a collector-emitter breakdown voltage of 40 V. With a maximum power dissipation of 6 W, it is suitable for applications requiring high current gain, specified as a minimum of 1000 at 5 A and 3 V. The transistor exhibits a Vce(sat) of 3 V at 100 mA and 10 A. Packaged in a TO-204AA (TO-3) metal can, the 2N6383 is designed for through-hole mounting and operates across a wide temperature range from -55°C to 175°C. This component finds application in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 6 W |