2N6381
TRANS PNP 100V 50A TO63Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6381 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a substantial 50A collector current capability, dissipating up to 250W. Housed in a TO-63 stud mount package, it provides robust thermal performance for power switching and amplification. The 2N6381 is commonly utilized in power supplies, motor control circuits, and industrial automation systems where high current handling and voltage withstand are critical. Its robust construction and specifications make it suitable for environments requiring reliable power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 250 W |
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