2N6379
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N6379 is a high-power PNP Bipolar Junction Transistor (BJT) designed for robust power switching and amplification applications. Featuring a 120V collector-emitter breakdown voltage and a continuous collector current capability of 50A, this device dissipates up to 250W. The TO-204AD (TO-3) through-hole package ensures effective thermal management for demanding operational environments. This component is utilized in industrial power supplies, motor control systems, and high-current switching circuits. The operating temperature range is -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 250 W |
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