2N6354
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6354 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, features a collector current capability of up to 10A and a collector-emitter breakdown voltage of 120V. With a maximum power dissipation of 140W and a transition frequency of 60MHz, the 2N6354 is suitable for power switching and amplification circuits. It exhibits a minimum DC current gain (hFE) of 10 at 10A collector current and 2V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 1V at 1A base current and 10A collector current. This device finds application in industrial power control, motor drives, and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 10A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10A, 2V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 140 W |