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2N6351E3

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2N6351E3

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN - Darlington 150 V 5 A 1 W Through Hole TO-33

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AC, TO-33-4 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic2.5V @ 10mA, 5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 5V
Frequency - Transition-
Supplier Device PackageTO-33
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max1 W

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