2N6351
TRANS NPN DARL 150V 5A TO33Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6351 is an NPN Darlington bipolar junction transistor (BJT) designed for high-gain switching and amplification applications. This component features a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 5 A. The DC current gain (hFE) is specified at a minimum of 1000 at 5 A collector current and 5 V collector-emitter voltage. The transistor exhibits a Vce(sat) of 2.5 V maximum at 10 mA base current and 5 A collector current. With a maximum power dissipation of 1 W, the 2N6351 is housed in a TO-33 (TO-205AC) metal can package, suitable for through-hole mounting. This device finds utility in power supply circuits, motor control, and general-purpose switching applications across various industrial and consumer electronics sectors. The operating temperature range is from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AC, TO-33-4 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-33 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1 W |
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