2N6350
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6350 is an NPN Darlington bipolar junction transistor designed for demanding applications. This through-hole mounted component features a high DC current gain (hFE) of 2000 minimum at 5A and 5V, enabling significant current amplification. With a collector current (Ic) capability of up to 5A and a collector-emitter breakdown voltage of 80V, the 2N6350 is suitable for power switching and amplification circuits. Its 1W power dissipation and operating temperature range of -65°C to 200°C (TJ) ensure reliability in harsh environments. The transistor is packaged in a TO-33 metal can, facilitating efficient heat dissipation. This device is commonly utilized in industrial control, power management, and audio amplification systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AC, TO-33-4 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-33 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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