2N6331
TRANS PNP 100V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6331 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-3 (TO-204AA) package, boasts a maximum collector-emitter breakdown voltage of 100V and can handle a continuous collector current of up to 30A. With a power dissipation capability of 200W, the 2N6331 is suitable for power switching, linear amplification, and power control circuits across various industrial sectors. Its robust construction and significant current and voltage ratings make it a reliable choice for applications requiring substantial power handling.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
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