2N6323
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology PNP Bipolar Junction Transistor, part number 2N6323. This power transistor is designed for demanding applications, offering a 300 V collector-emitter breakdown voltage and a continuous collector current capability of 30 A. With a maximum power dissipation of 350 W, it is suitable for high-power switching and amplification tasks. The device features a TO-204AD (TO-3) through-hole package, facilitating robust thermal management and reliable mounting. Its operating temperature range extends from -65°C to 200°C (TJ), ensuring performance in challenging environments. This component is commonly utilized in power supply regulation, motor control, and audio amplification circuits within industrial and commercial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 350 W |
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