2N6322
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6322 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, offers a maximum collector-emitter breakdown voltage of 200V and a continuous collector current capability of up to 30A. With a substantial power dissipation rating of 350W, the 2N6322 is suitable for power switching and amplification circuits in industrial, automotive, and heavy equipment sectors. Its robust construction and electrical characteristics make it a reliable choice for power control and regulation tasks where significant current and voltage handling are required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 350 W |
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