2N6318
TRANS PNP 80V 7A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N6318 PNP bipolar junction transistor. This discrete component features a 80V collector-emitter breakdown voltage (Vce) and a maximum continuous collector current (Ic) of 7A, with a power dissipation rating of 90W. The 2N6318 is housed in a TO-66 (TO-213AA) through-hole package. Key electrical specifications include a minimum DC current gain (hFE) of 35 at 500mA and 4V, and a maximum saturation voltage (Vce) of 2V at 1.75A and 7A. The collector cutoff current (Ic) is rated at a maximum of 2mA. This component is suitable for operation across a wide temperature range, from -65°C to 200°C (TJ). Applications for this device span industrial control systems and power switching within various electronic equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 500mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 90 W |
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