2N6317
TRANS PNP 60V 7A TO-213AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6317 is a PNP bipolar junction transistor designed for high-power applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 7A, with a power dissipation capability of 90W. The transistor exhibits a minimum DC current gain (hFE) of 25 at 2.5A and 4V, and a Vce saturation of 2V at 1.75A and 7A. Packaged in a TO-213AA (TO-66-2) through-hole configuration, it operates across a wide temperature range of -65°C to 200°C (TJ). The 2N6317 is suitable for use in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2.5A, 4V |
| Frequency - Transition | - |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 90 W |
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