2N6316
TRANS NPN 80V 7A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Bipolar Junction Transistor, part number 2N6316. This through-hole device is housed in a TO-66 (TO-213AA) package, offering a 80V collector-emitter breakdown voltage and a continuous collector current rating of 7A. With a maximum power dissipation of 90W and a minimum DC current gain (hFE) of 35 at 500mA collector current and 4V collector-emitter voltage, the 2N6316 is suitable for power switching and amplification applications. The saturation voltage at 1.75A base current and 7A collector current is 2V. This component operates across a temperature range of -65°C to 200°C. It finds application in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 500mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 90 W |
Request a Quote
Clients Also Buy
2N4931
TRANS PNP 250V 200MA TO39
2N6192
PNP POWER TRANSISTOR SILICON AMP
JANSR2N2222AUBC
TRANS NPN 50V 0.8A 3SMD
