2N6315
TRANS NPN 60V 7A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6315 is an NPN bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 7A. With a maximum power dissipation of 90W, it is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 35 at 500mA and 4V, and a Vce(sat) of 2V at 1.75A and 7A. The 2N6315 is presented in a TO-66 (TO-213AA) through-hole package, facilitating integration into traditional circuit designs. Its operational temperature range spans from -65°C to 200°C. This device finds utility in industrial control, power supplies, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.75A, 7A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 500mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 90 W |