2N6303
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6303 is a PNP bipolar junction transistor (BJT) designed for general-purpose power amplification and switching applications. This through-hole component features a maximum collector current (Ic) of 3 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a transition frequency (fT) of 60 MHz and a maximum power dissipation of 1 W, it is suitable for use in industrial control systems and power supply circuits. The device exhibits a minimum DC current gain (hFE) of 35 at 500 mA and 1 V, and a Vce(sat) of 750 mV at 150 mA and 1.5 A. The 2N6303 is packaged in a TO-205AA (TO-5-3 Metal Can) package, operating within a temperature range of -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 500mA, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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