2N6301P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6301P is a high-power NPN Darlington bipolar junction transistor. This component is designed for applications requiring significant current gain and power handling capabilities. It features a maximum collector current (Ic) of 8 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a power dissipation rating of 75 W, it is suitable for demanding power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 750 at 4 A and 3 V. The saturation voltage (Vce Sat) is a maximum of 3 V at 80 mA and 8 A. Packaged in a TO-66 (TO-213AA) through-hole configuration, the 2N6301P operates across an extended temperature range of -55°C to 200°C. This component finds utility in industrial power control and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
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