2N6301E3
TRANS NPN DARL 80V 8A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6301E3 is an NPN Darlington bipolar junction transistor housed in a TO-66 (TO-213AA) package. This device offers a maximum collector current of 8 A and a collector-emitter breakdown voltage of 80 V. It features a substantial DC current gain (hFE) of at least 750 at 4 A and 3 V, with a saturation voltage (Vce Sat) not exceeding 3 V at 80 mA collector current and 8 A collector current. The transistor is rated for a maximum power dissipation of 75 W and operates across a temperature range of -55°C to 200°C. This component is suitable for applications in power switching and general-purpose amplification stages within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
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