2N6301
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6301 is an NPN Darlington bipolar junction transistor. This component offers a high DC current gain (hFE) of 750 minimum at 4A and 3V, with a collector current (Ic) maximum of 8A. It features a collector-emitter breakdown voltage (Vce(max)) of 80V and a saturation voltage (Vce(sat)) of 3V maximum at 80mA and 8A. The power dissipation is rated at 75W. This transistor is housed in a TO-66 (TO-213AA) through-hole package, designed for robust thermal management and suitable for applications in industrial and automotive sectors requiring high current gain and switching capabilities. The operating temperature range is -55°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |
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