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2N6300

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2N6300

TRANS NPN DARL 60V 8A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N6300 is an NPN Darlington bipolar junction transistor designed for high-current applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 8A, with a power dissipation capability of 75W. The device exhibits a high DC current gain (hFE) of a minimum of 750 at 4A collector current and 3V Vce. Saturation voltage at 8A collector current and 80mA base current is specified at a maximum of 3V. The transistor is housed in a TO-66 (TO-213AA) package for through-hole mounting. Its operating temperature range is -55°C to 200°C. Typical applications include power switching and amplification circuits across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max75 W

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