2N6299P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6299P is a high-power PNP Darlington bipolar junction transistor (BJT) designed for robust performance. This component offers a continuous collector current (Ic) capability of 8 A and a maximum collector-emitter breakdown voltage (Vce) of 80 V. Featuring a significant DC current gain (hFE) of at least 750 at 4 A and 3 V, the 2N6299P is suitable for applications requiring substantial amplification. With a maximum power dissipation of 64 W and a saturation voltage (Vce(sat)) of 2 V at 80 mA and 8 A, it is engineered for efficient operation. The TO-66 (TO-213AA) package with a through-hole mounting type facilitates integration into demanding circuit designs. This transistor is commonly utilized in industrial automation, power switching, and motor control systems. It operates within a temperature range of -65°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
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