2N6299E3
TRANS PNP DARL 80V 8A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology PNP Darlington transistor, part number 2N6299E3, offers a robust 80V collector-emitter breakdown voltage and a maximum collector current of 8A. This device features a high DC current gain (hFE) of 500 minimum at 1A and 3V, and a low saturation voltage of 2V maximum at 80mA and 8A. With a maximum power dissipation of 64W and an operating temperature range of -65°C to 200°C, the 2N6299E3 is housed in a TO-66 (TO-213AA) package suitable for through-hole mounting. This component is designed for demanding applications in industrial control, power switching, and audio amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
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