2N6299
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology presents the 2N6299, a PNP Darlington bipolar junction transistor. This component offers an 80 V collector-emitter breakdown voltage and a maximum continuous collector current of 8 A, with a power dissipation capability of 64 W. The device features a high DC current gain (hFE) of at least 750 at 4 A and 3 V. Designed for through-hole mounting, it is housed in a TO-66 (TO-213AA) package. The saturation voltage (Vce Sat) is a maximum of 2 V at 80 mA base current and 8 A collector current. This transistor is suitable for applications in power switching and amplification circuits across various industrial sectors. It operates within a temperature range of -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |
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