2N6298
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N6298 is a high-gain PNP Darlington bipolar junction transistor designed for demanding applications. This component features a 60 V collector-emitter breakdown voltage and a maximum continuous collector current of 8 A, with a significant power dissipation capability of 64 W. The 2N6298 exhibits a minimum DC current gain (hFE) of 750 at 4 A and 3 V, characteristic of its Darlington configuration. Saturation voltage (Vce Sat) is specified at a maximum of 2 V when operating at 80 mA base current and 8 A collector current. Housed in a TO-66 (TO-213AA) through-hole package, this transistor is suitable for power switching and amplification circuits across industrial and consumer electronics sectors. The operating temperature range is -65°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 64 W |
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