2N6295
TRANS NPN DARL 80V 4A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N6295 is an NPN Darlington bipolar junction transistor (BJT) designed for high-current switching and amplification applications. This component features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce(max)) of 80V. The minimum DC current gain (hFE) is specified as 300 at 1.5A and 3V, indicating significant amplification capabilities. With a maximum power dissipation of 50W, the 2N6295 is suited for demanding power control circuits. The device is housed in a TO-66 (TO-213AA) package, facilitating through-hole mounting. Its robust construction and operating temperature range of -65°C to 200°C make it suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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